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| AEGIS SEMICONDUTORES LTDA. A3L:250DT.XXH VOLTAGE RATINGS Part Number VRRM , VR (V) rep. peak reverse voltage TJ = 0 to 125OC A3L:250TD.02H A3L:250TD.04H A3L:250TD.06H A3L:250TD.08H A3L:250TD.10H A3L:250TD.12H A3L:250TD.14H A3L:250TD.16H 200 400 600 800 1000 1200 1400 1600 Max. VRSM , VR (V) Max. nonrep. peak reverse voltage TJ = 25 to 125O C 300 500 700 900 1100 1300 1500 1700 TJ = -40 to 0OC 200 400 600 800 1000 1200 1330 1520 MAXIMUM ALLOWABLE RATINGS PARAMETER TJ Junction Temperature Tstg Storage Temperature IF(AV) Max. Av. current @ Max. TC VALUE -40 to 125 -40 to 150 250 85 555 7.16 IFSM Max. Peak non-rep. surge current 7.81 kA 8.17 8.9 265 50 Hz half cycle sine wave 60 Hz half cycle sine wave t = 10ms Initial TJ = 125 C, no voltage applied after surge. O UNITS O NOTES 180 O half sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave Initial TJ = 125 C, rated VRRM applied after surge. O C C C O A O IF(RMS) Nom. RMS current A 289 I t Max. I t capability 302 329 It 2 1/2 2 2 t = 8.3 ms kA s t = 10ms t = 8.3 ms kA s 2 1/2 2 Initial TJ = 125 C, rated VRRM applied after surge. O O Initial TJ = 125 C, no voltage applied after surge. 2 Max. I t 2 1/2 capability 3610 Initial TJ = 125OC, no voltage applied after surge. 2 1/2 1/2 tx . It di/dt Max. Non-repetitive rate-ofrise current PGM Max. Peak gate power PG(AV) Max. Av. gate power +IGM Max. Peak gate current -VGM Max. Peak negative gate voltage F Mounting Force 500 10 3 150 2 3(5) A/ms W W mA V N.m for time tx = I t * (0.1 < tx < 10ms). O TJ = 125 C, VD = VDRM , ITM = 1600A. Gate pulse: 20V, 20W, 10ms, 0.5ms rise time, Max. repetitive di/dt is aproximately 40% of non-repetitive value. tp < 5 ms tp < 5 ms Upper connectors(Heatsink) AEGIS SEMICONDUTORES LTDA. A3L:250DT.XXH CHARACTERISTICS PARAMETER VTM peak on-state voltage VT(TO) Threshold voltage rT Slope resistance IL Latching current IH Holding current td Delay time tq Turn-off time dv/dt Critical rate-of-rise of off-state voltage IRM, IDM Peak reverse and offstate current IGT DC gate current to trigger VGT DC gate voltage to trigger VGD DC gate voltage not to trigger RthJC Thermal resistance, junction-to-case RthCS Thermal resistance, case-to-sink wt Weight Case Style MIN. --------------80 ------50 4 2 ------------TYP. ----------0.7 125 140 --10 --80 --------------MAX. UNITS 1.37 0.89 0.61 200 500 1.5 200 --1000 50 300 150 --2.5 0.3 0.07 0.071 0.075 0.02 mA mA V V V mW mA mA ms ms TEST CONDITIONS C, Initial T J = 25 O 50-60Hz half sine, Ipeak = 785A. TJ = 125 O C Av. power = V T(TO) * IT(AV) +rT * [IT(RMS)]2, 180 Half Sine. Use low values for ITM < p rated IT(AV) TC = 125 C, 12V anode. Gate pulse: 10V, 20 W, 100ms. TC = 25 OC, 12V anode. Initial IT = 15A. TC = 25 O VD = VDRM, 50A resistive load. Gate pulse: 10V, C, 20W, 10ms, 1ms rise time. O TJ = 125 C, ITM = 500A, di/dt = 25A/ms, VR = 50V. dv/dt = 20 V/ms lin. to rated V DRM. Gate: 0V, 100 W. TJ = 125 O Exp. to 100% or lin. Higher dv/dt values C. avaliable. To 80% V DRM, gate open. TJ = 125 OC, Exp. To 67% V DRM, gate open. TJ = 125 O Rated VRRM and VDRM, gate open. C, TC = -40 O C TC = 25 OC TC = -40 C O O V/ms +12V anode-to-cathode. For recommended gate drive see "Gate Characteristics" figure. TC = 25OC TC = 25 OC, Max. Value which will not trigger with rated VDRM V anode. O C/W DC operation, single side cooled. O C/W 180 sine wave, single side cooled. O C/W 120 rectangular wave, single side cooled. C/W Mtg. Surface smooth, flat and greased. Single side cooled. ----- O --500(18) "Magn-A-Pak" g(oz.) IR Maximum Allowable Case Temperature Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C) 120 120 Maximum Allowable Case Temperature 110 110 100 100 90 30 90 30 80 60 90 80 60 70 120 180 70 90 120 60 0 50 100 150 200 250 300 *Sinusoidal Waveform 60 *Rectangular Waveform 180 DC 350 400 0 50 100 150 200 250 300 350 400 450 500 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics AEGIS SEMICONDUTORES LTDA. A3L:250DT.XXH Maximum Average Forward Power Loss 3500 30 Maximum Average Forward Power Loss 3000 Maximum Average Forward Power Loss (W) Maximum Average Forward Power Loss (W) 30 3000 2500 2000 1500 1000 500 0 0 *Sinusoidal Waveform 2500 2000 60 60 1500 90 90 120 180 1000 120 180 DC 500 0 *Rectangular Waveform 100 200 300 400 500 600 0 100 200 300 400 500 600 Average Forward Current (A) Average Forward Current (A) Fig.3 -Forward Power Loss Characteristics Fig. 4 - Forward Power Loss Characteristics Forward Voltage Drop Transient Thermal Impedance ZthJC 1 Instantaneous Forward Current (A) 1000 Transient Thermal Impedance ZthJC 2 3 4 5 0.1 100 125C 25C 10 0 1 0.01 0.01 0.1 1 10 Instantaneous Forward Voltage (V) Time (s) Fig. 5 - Forward Voltage Drop Characteristics Fig. 6 - Transient Thermal Impedance AEGIS SEMICONDUTORES LTDA. A3L:250DT.XXH Fig. 7 - Gate Trigger Characteristics 1 ~ G1 K1 + K2 2 G2 - 3 Fig. 8 - Outline Characteristics Fig. 9 - Circuit Layout |
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